regarding the change of names mentioned in the document, such as hitachi electric and hitachi xx, to renesas technology corp. the semiconductor operations of mitsubishi electric and hitachi were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although hitachi, hitachi, ltd., hitachi semiconductors, and other hitachi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. renesas technology home page: http://www.renesas.com renesas technology corp. customer support dept. april 1, 2003 to all our customers
cautions keep safety first in your circuit designs! 1. renesas technology corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas technology corporation or a third party. 2. renesas technology corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by renesas technology corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact renesas technology corporation or an authorized renesas technology corporation product distributor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to information published by renesas technology corporation by various means, including the renesas technology corporation semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact renesas technology corporation or an authorized renesas technology corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corporation is necessary to reprint or reproduce in whole or in part these materials. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a license from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. 8. please contact renesas technology corporation for further details on these materials or the products contained therein.
2SJ217 silicon p-channel mos fet november 1996 application high speed power switching features low on-resistance high speed switching low drive current 4 v gate drive device ? can be driven from 5 v source suitable for motor drive, dc-dc converter, power switch and solenoid drive outline d g s 1 2 3 to-3p 1. gate 2. drain (flange) 3. source
2SJ217 2 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss ?0 v gate to source voltage v gss 20 v drain current i d ?5 a drain peak current i d(pulse) * 1 ?80 a body to drain diode reverse drain current i dr ?5 a channel dissipation pch* 2 150 w channel temperature tch 150 c storage temperature tstg ?5 to +150 c notes 1. pw 10 m s, duty cycle 1% 2. value at t c = 25 c electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss ?0 v i d = ?0 ma, v gs = 0 gate to source breakdown voltage v (br)gss 20v i g = 100 m a, v ds = 0 gate to source leak current i gss 10 m av gs = 16 v, v ds = 0 zero gate voltage drain current i dss ?50 m av ds = ?0 v, v gs = 0 gate to source cutoff voltage v gs(off) ?.0 ?.0 v i d = ? ma, v ds = ?0 v static drain to source on state r ds(on) 0.033 0.042 w i d = ?0 a, v gs = ?0 v* 1 resistance 0.045 0.06 i d = ?0 a, v gs = ? v* 1 forward transfer admittance |y fs |1625 s i d = ?0 a, v ds = ?0 v* 1 input capacitance ciss 3800 pf v ds = ?0 v, v gs = 0, output capacitance coss 2000 pf f = 1 mhz reverse transfer capacitance crss 490 pf turn-on delay time t d(on) 30 ns i d = ?0 a, v gs = ?0 v, rise time t r 235 ns r l = 1.5 w turn-off delay time t d(off) 670 ns fall time t f 450 ns body to drain diode forward voltage v df ?.35 v i f = ?5 a, v gs = 0 body to drain diode reverse recovery time t rr 300 ns i f = ?5 a, v gs = 0, di f /dt = 50 a/ m s note 1. pulse test
2SJ217 3 150 100 50 0 50 100 150 case temperature t c (?) channel dissipation pch (w) power vs. temperature derating ?00 ?0 ?0 drain to source voltage v ds (v) drain current i d (a) maximum safe operation area ?00 ?0 ? ? ta = 25? 10 m s 100 m s 1 ms pw = 10 ms (1 shot) dc operation (t c = 25?) operation in this area is limited by r ds (on) ? ? ? ?0 ?0 ?0 ?00 ?00 ? ?0 drain to source voltage v ds (v) typical output characteristics ?0 ?0 ? ?2 ?6 0 ?0 ?0 drain current i d (a) pulse test ? v ? v v gs = ? v ?0 v ? v ? v ?0 ? ? gate to source voltage v gs (v) drain current i d (a) typical forward transfer characteristics ?0 ?0 ? ? ? 0 ?0 ?0 t c = ?5? 25? 75? v ds = ?0 v pulse test
2SJ217 4 ?.5 ? ?0 gate to source voltage v gs (v) drain to source saturation voltage v ds (on) (v) ?.0 ?.5 ? ? ? 0 ?.0 ?.5 drain to source saturation voltage vs. gate to source voltage i d = ?0 a ?0 a ?0 a pulse test 0.5 ?0 drain current i d (a) static drain to source on state resistance r ds (on) ( w ) 0.2 0.02 ? ?0 ?0 0.01 0.05 0.1 static drain to source on state resistance vs. drain current pulse test 0.005 ?00 v gs = ? v ?0 v ? ?00 0.1 40 160 case temperature t c (?) static drain to source on state resistance r ds (on) ( w ) 0.08 0.02 0 80 120 0 0.04 0.06 static drain to source on state resistance vs. temperature pulse test ?0 v gs = ? v v gs = ?0 v ?0 a i d = ?0 a i d = ?0 a ?0, ?0 a 200 ? ?0 drain current i d (a) 100 5 ? ? ?0 ?.5 20 50 10 2 ?0 v ds = ?0 v pulse test forward transfer admittance ? yfs ? (ns) forward transfer admittance vs. drain current ?5? t c = 25? 75?
2SJ217 5 5,000 ? ?0 reverse drain current i dr (a) 2,000 100 ? ? ?0 ?.5 500 1,000 200 50 ?0 reverse recovery time t rr (ns) body to drain diode reverse recovery time di/dt = 50 a/ m s, v gs = 0 ta = 25? pulse test 10,000 ?0 ?0 drain to source voltage v ds (v) capacitance c (pf) 500 ?0 ?0 ?0 2,000 typical capacitance vs. drain to source voltage 0 100 v gs = 0 f = 1 mhz crss coss ciss 5,000 1,000 200 0 80 200 gate charge qg (nc) drain to source voltage v ds (v) dynamic input characteristics ?0 ?0 40 120 160 0 ?0 ?0 0 ? ?6 ?0 ?2 ? gate to source voltage v gs (v) ?00 i d = ?5 a v dd = ?0 v ?5 v ?0 v v dd = ?0 v ?5 v ?0 v v gs v ds 1,000 drain current i d (a) switching time t (ns) 500 50 10 100 200 ?.5 20 switching characteristics t d (off) ? ? ? ?0 ?0 t f t r t d (on) v gs = ?0 v, pw = 2 m s v dd ?0 v, duty 1% = . . < = ?0
2SJ217 6 ?00 ?.0 ?.5 source to drain voltage v sd (v) reverse drain current i dr (a) ?0 ?.5 ?.5 ?.0 ?0 ?0 reverse drain current vs. source to drain voltage pulse test 0 ?0 ?0 v ? v v gs = 0,5 v 3 pulse width pw (s) normalized transient thermal impedance g s (t) 1 0.1 0.3 10 m 0.03 0.01 100 m 10 m 100 m 1 10 1 m normalized transient thermal impedance vs. pulse width t c = 25? d = 1 0.5 0.2 0.1 0.05 0.02 0.01 1 shot pulse t pw p dm d = t pw q ch? (t) = g s (t) ? q ch? q ch? = 0.83?/w, t c = 25?
2SJ217 7 switching time test circuit vin monitor vin ?0 v 50 w d.u.t. vout monitor r l v dd = 30 v switching time test waveforms vin vout t d (on) 10% t r t f 10% 90% 90% 10% 90% t d (off)
2SJ217 8 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachi? permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user? unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachi? semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachi? products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachi? sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachi? products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd. semiconductor & ic div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 for further information write to: hitachi america, ltd. semiconductor & ic div. 2000 sierra point parkway brisbane, ca. 94005-1835 u s a tel: 415-589-8300 fax: 415-583-4207 hitachi europe gmbh electronic components group continental europe dornacher stra? 3 d-85622 feldkirchen m?nchen tel: 089-9 91 80-0 fax: 089-9 29 30 00 hitachi europe ltd. electronic components div. northern europe headquarters whitebrook park lower cookham road maidenhead berkshire sl6 8ya united kingdom tel: 0628-585000 fax: 0628-778322 hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 0104 tel: 535-2100 fax: 535-1533 hitachi asia (hong kong) ltd. unit 706, north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel: 27359218 fax: 27306071
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